FDC6506P
Manufacturer:
On Semiconductor
Mfr.Part #:
FDC6506P
Datasheet:
Description:
MOSFETs SSOT-6 SMD/SMT P-Channel number of channels:2 960 mW 30 V Continuous Drain Current (ID):1.8 A 3.5 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -30 V |
| Length | 3 mm |
| Width | 1.7 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 6 |
| Resistance | 170 MΩ |
| Height | 1 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Weight | 0.036 g |
| Contact Plating | Tin |
| Number of Elements | 2 |
| Current Rating | -1.8 A |
| Lifecycle Status | EOL (Last Updated: 5 months ago) |
| Max Power Dissipation | 960 mW |
| Power Dissipation | 960 mW |
| Threshold Voltage | -1.8 V |
| Number of Channels | 2 |
| Input capacitance | 190 pF |
| Continuous Drain Current (ID) | 1.8 A |
| Rds On Max | 170 mΩ |
| Drain to Source Voltage (Vdss) | -30 V |
| Turn-On Delay Time | 7 ns |
| Turn-Off Delay Time | 14 ns |
| Element Configuration | Dual |
| Rise Time | 8 ns |
| Dual Supply Voltage | 30 V |
| Gate Charge | 3.5 nC |
| Drain to Source Resistance | 170 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| Schedule B | 8541210080 |
| Manufacturer Lifecycle Status | LIFETIME (Last Updated: 5 months ago) |
| Gate to Source Threshold Voltage | 3 V |
| FET Type(Transistor Polarity) | P-Channel |
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